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MMZ25332BT1 1 rf device data freescale semiconductor, inc. heterojunction bipolar transistor technology (ingap hbt) high efficiency/linearity amplifier the mmz25332b is a 2--stage, high linearity ingap hbt broadband amplifier designed for femtocell, picocell, wlan (802.11g/n), w--cdma, td--scdma and lte wireless broadband applications. i t provides exceptional linearity for lte and w--cdma air interfaces with an acpr of ?50 dbc at an output power of up to 22 dbm, covering frequencies from 1500 to 2800 mhz. it operates from a supply voltage of 3 to 5 v. the amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost--effective, surface mount qfn 3 3 package. the device offers state--of--the--art reliability, ruggedness, temperature st ability and esd performance. ? typical performance: v cc1 =v cc2 =v bias =5vdc,i cq = 400 ma frequency p out (dbm) g ps (db) acpr (dbc) pae (%) test signal 2140 mhz 22 27.0 ?50.0 7.0 w--cdma 2620 mhz 21 26.0 ?50.0 5.0 lte 20 mhz features ? frequency: 1500?2800 mhz ? p1db: 33 dbm @ 2500 mhz ? power gain: 26.5 db @ 2500 mhz ? oip3: 48 dbm @ 2500 mhz ? evm 3% @ 23.5 dbm p out , wlan (802.11g) ? active bias control (adjustable externally) ? power down control via v bias pin ? class 3a hbm esd rating ? single 3 to 5 v supply ? single--ended power detector ? cost--effective 12--pin, 3 mm qfn surface mount plastic package ? in tape and reel. t1 suffix = 1,000 units, 12 mm tape width, 7--inch reel. table 1. typical cw performance (1) characteristic symbol 1800 mhz 2500 mhz 2800 mhz unit small--signal gain (s21) g p 27.6 26.5 25.0 db input return loss (s11) irl ?26 ?17 ?16 db output return loss (s22) orl ?9 ?17 ?16 db power output @ 1db compression p1db 32 33 32 dbm 1. v cc1 =v cc2 =v bias =5vdc,t a =25 c, 50 ohm system, cw application circuit table 2. maximum ratings rating symbol value unit supply voltage v cc 6 v supply current i cc 1200 ma rf input power p in 30 dbm storage temperature range t stg ?65 to +150 c junction temperature t j 175 c table 3. thermal characteristics characteristic symbol value (2) unit thermal resistance, junction to case case temperature 92 c, v cc1 =v cc2 =v bias =5vdc r jc 16 c/w 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. freescale semiconductor technical data document number: mmz25332b rev. 2, 5/2014 1500?2800 mhz, 26.5 db 33 dbm, 5.8 nf ingap hbt linear amplifier MMZ25332BT1 qfn 3 3 ? freescale semiconductor, inc., 2012, 2014. all rights reserved.
2 rf device data freescale semiconductor, inc. MMZ25332BT1 table 4. electrical characteristics (1) (v cc1 =v cc2 =v bias = 5 vdc, 2500 mhz, t a =25 c, 50 ohm system, in freescale cw application circuit) characteristic symbol min typ max unit small--signal gain (s21) g p 25 26.5 ? db input return loss (s11) irl ? ?17 ? db output return loss (s22) orl ? ?17 ? db power output @ 1db compression p1db ? 33 ? dbm third order output intercept point, two--tone cw oip3 ? 48 ? dbm noise figure nf ? 5.8 ? db supply current i cq 356 390 412 ma supply voltage v cc ? 5 ? v table 5. esd protection characteristics test methodology class human body model (per jesd22--a114) 3a machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 6. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 1 260 c 1. see appendix a for test fixture documentation. figure 1. functional block diagram figure 2. pin connections v cc1 v cc2 /rf out rf in 19 28 37 12 11 10 456 v cc2 /rf out v cc1 p det n.c. rf in v cc2 /rf out v ba1 v ba2 v bias v cc1 v cc2 /rf out rf in v cc2 /rf out v cc1 p det rf in v cc2 /rf out v ba1 v bias v ba2 bias circuit
MMZ25332BT1 3 rf device data freescale semiconductor, inc. 50 ohm application circuit: 2110?2170 mhz, 5 volt operation figure 3. MMZ25332BT1 test circuit schematic r1 l1 c12 3 1 c4 bias circuit v cc1 z1 l2 v bias c1 2 r2 p det c3 c9 v cc2 c13 c14 c6 z1 0.151 0.030 microstrip rf input rf output 456 7 8 9 12 11 10 table 7. MMZ25332BT1 test circuit c omponent designations and values part description part number manufacturer c1, c12 1 f chip capacitors grm155r61a105ke15 murata c2, c5, c7, c8, c10, c11, c15 components not placed c3 470 pf chip capacitor grm1555c1h471ja01 murata c4 8.2 pf chip capacitor 04023j8r2bbs avx c6 4.7 f chip capacitor grm188r60j475ke19d murata c9, c14 22 pf chip capacitors 04023j22r0bbs avx c13 3.3 pf chip capacitor 04023j3r3bbs avx l1 12 nh chip inductor 0603hc--12nxjlw coilcraft l2 6.8 nh chip inductor 0603hc--6n8xjlw coilcraft r1 1.2 k ? , 1/16 w chip resistor rc0402jr--071k2l yageo r2 330 ? , 1/16 w chip resistor rc0402jr--07330l yageo pcb 0.014 , r =3.7 fr408 isola note: component numbers c2, c5, c7, c8, c10, c11 and c15 are labeled on board but not placed.
4 rf device data freescale semiconductor, inc. MMZ25332BT1 50 ohm application circuit: 2110?2170 mhz, 5 volt operation figure 4. mmz 25332bt1 test circuit component layout (1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]. note: component numbers c2*, c5*, c7*, c8*, c10*, c11* and c15* are labeled on board but not placed. c9 c7* r1 c12 r2 c13 c15* c14 c6 c1 l1 c4 l2 c3 qfn 3 3--12h rev. 1 rf out rf in c2* c5* c10* c8* c11* v cc1 v dect v cc2 v bias (1) pcb actual size: 1.3 1.46 . table 7. MMZ25332BT1 test circuit c omponent designations and values part description part number manufacturer c1, c12 1 f chip capacitors grm155r61a105ke15 murata c2, c5, c7, c8, c10, c11, c15 components not placed c3 470 pf chip capacitor grm1555c1h471ja01 murata c4 8.2 pf chip capacitor 04023j8r2bbs avx c6 4.7 f chip capacitor grm188r60j475ke19d murata c9, c14 22 pf chip capacitors 04023j22r0bbs avx c13 3.3 pf chip capacitor 04023j3r3bbs avx l1 12 nh chip inductor 0603hc--12nxjlw coilcraft l2 6.8 nh chip inductor 0603hc--6n8xjlw coilcraft r1 1.2 k ? , 1/16 w chip resistor rc0402jr--071k2l yageo r2 330 ? , 1/16 w chip resistor rc0402jr--07330l yageo pcb 0.014 , r =3.7 fr408 isola (test circuit component designations and values table repeated for reference.)
MMZ25332BT1 5 rf device data freescale semiconductor, inc. 50 ohm typical characteristics ? 2 110?2170 mhz, 5 volt operation -- 3 0 -- 2 0 figure 5. s11 versus frequency versus temperature 2300 -- 3 5 -- 0 1800 f, frequency (mhz) 1900 -- 5 -- 1 0 -- 1 5 -- 2 0 -- 2 5 -- 3 0 s11 (db) -- 4 0 c 2000 2100 2200 25 c 85 c figure 6. s21 versus frequency versus temperature 5 40 f, frequency (mhz) 35 30 25 15 10 s21 (db) -- 4 0 c 25 c 85 c figure 7. s12 versus frequency versus temperature -- 4 8 -- 3 8 f, frequency (mhz) -- 4 0 -- 4 2 -- 4 6 s12 (db) -- 4 0 c 25 c 85 c v cc1 =v cc2 =v bias =5vdc v cc1 =v cc2 =v bias =5vdc v cc1 =v cc2 =v bias =5vdc 20 figure 8. s22 versus frequency versus temperature 0 f, frequency (mhz) -- 5 -- 1 0 -- 1 5 -- 2 5 s22 (db) -- 4 0 c 25 c 85 c v cc1 =v cc2 =v bias =5vdc 2300 1800 1900 2000 2100 2200 2300 1800 1900 2000 2100 2200 2300 1800 1900 2000 2100 2200 -- 4 4
6 rf device data freescale semiconductor, inc. MMZ25332BT1 50 ohm typical characteristics ? 2 110?2170 mhz, 5 volt operation 540 120 180 figure 9. acpr and collector current versus output power versus temperature ? 2140 mhz p out , output power (dbm) -- 3 0 -- 3 4 -- 3 8 -- 6 2 21 -- 5 0 i cc , collector current (ma) acpr (dbc) -- 4 2 -- 5 8 11 13 240 420 480 -- 5 4 -- 6 6 27 600 0 -- 4 6 15 17 19 25 23 -- 4 0 c 25 c 85 c 25 c 85 c -- 4 0 c 85 c 85 c gain pae i cc -- 7 0 v cc1 =v cc2 =v bias =5vdc f = 2140 mhz v cc1 =v cc2 =v bias =5vdc f = 2140 mhz -- 3 0 -- 3 4 -- 3 8 -- 6 2 21 -- 5 0 -- 4 2 -- 5 8 11 13 300 360 -- 5 4 -- 6 6 27 60 -- 4 6 15 17 19 25 23 -- 7 0 540 120 180 figure 9a. acpr and collector current versus output power ? 1960 mhz p out , output power (dbm) -- 3 0 -- 3 4 -- 3 8 -- 6 2 21 -- 5 0 i cc , collector current (ma) acpr (dbc) -- 4 2 -- 5 8 11 13 300 360 480 -- 5 4 -- 6 6 27 600 0 -- 4 6 15 17 19 25 23 acpr i cc -- 7 0 v cc1 =v cc2 =v bias =5vdc f = 1960 mhz p out , output power (dbm) -- 3 0 -- 3 4 -- 3 8 -- 6 2 21 -- 5 0 -- 4 2 -- 5 8 11 13 240 420 -- 5 4 -- 6 6 27 60 -- 4 6 15 17 19 25 23 -- 7 0 27 6 9 figure 10. power gain and power added efficiency versus output power versus temperature p out , output power (dbm) 30 28 26 14 21 20 pae, power added efficiency (%) g ps , power gain (db) 24 16 11 13 12 15 18 21 24 18 12 27 30 3 0 22 15 17 19 25 23 32 figure 11. p1db versus frequency versus temperature, cw f, frequency (mhz) 33 32 31 28 30 27 29 -- 4 0 c 25 c 85 c 34 p1db, 1 db compression point, cw (dbm) 2300 1800 1900 2000 2100 2200 -- 4 0 c -- 4 0 c 25 c 25 c acpr v cc1 =v cc2 =v bias =5vdc
MMZ25332BT1 7 rf device data freescale semiconductor, inc. 50 ohm typical characteristics ? 2 110?2170 mhz, 5 volt operation 27 6 9 -- 3 0 -- 3 4 -- 3 8 -- 6 2 21 -- 5 0 pae, power added efficiency (%) acpr (dbc) -- 4 2 -- 5 8 11 13 12 15 18 21 24 -- 5 4 -- 6 6 27 30 3 0 -- 4 6 15 17 19 25 23 -- 7 0 p out , output power (dbm) -- 3 0 -- 3 4 -- 3 8 -- 6 2 23 -- 5 0 acpr (dbc) -- 4 2 -- 5 8 17 -- 5 4 -- 6 6 27 -- 4 6 19 21 25 -- 7 0 pae 1.8 1.6 1.4 0.2 21 0.8 p det , power detector (v) 1.2 0.4 11 13 0.6 0 27 1 15 17 19 25 23 25 c 85 c -- 4 0 c 2 v cc1 =v cc2 =v bias =5vdc f = 2140 mhz p out , output power (dbm) figure 12. power detector versus output power versus temperature figure 13. acpr and power added efficiency versus output power p out , output power (dbm) figure 14. acpr versus output power with bias config 2 uncorrected and bias config 2 dpd corrected note: bias config 1: 400 ma avg. using r2 = 330 ? bias config 2: 300 ma avg. using r2 = 470 ? v cc1 =v cc2 =v bias =5vdc f = 2140 mhz bias config 2 = 300 ma avg. bias config 1 note: bias config 2: 300 ma avg. using r2 = 470 ? uncorrected dpd corrected, with memory correction acpr v cc1 =v cc2 =v bias = 5 vdc, f = 2140 mhz bias config 1 = 400 ma avg. bias config 2 = 300 ma avg. bias config 2 bias config 1 bias config 2
8 rf device data freescale semiconductor, inc. MMZ25332BT1 50 ohm application circuit: 2110?2170 mhz, 3.3 volt operation figure 15. MMZ25332BT1 test circuit schematic r1 l1 c12 3 1 c4 bias circuit v cc1 z1 l2 v bias c1 2 r2 p det c3 c9 v cc2 c13 c14 c6 z1 0.151 0.030 microstrip rf input rf output 456 7 8 9 12 11 10 table 8. MMZ25332BT1 test circuit c omponent designations and values part description part number manufacturer c1, c12 1 f chip capacitors grm155r61a105ke15 murata c2, c5, c7, c8, c10, c11, c15 components not placed c3 470 pf chip capacitor grm1555c1h471ja01 murata c4 8.2 pf chip capacitor 04023j8r2bbs avx c6 4.7 f chip capacitor grm188r60j475ke19d murata c9, c14 22 pf chip capacitors 04023j22r0bbs avx c13 3.3 pf chip capacitor 04023j3r3bbs avx l1 12 nh chip inductor 0603hc--12nxjlw coilcraft l2 6.8 nh chip inductor 0603hc--6n8xjlw coilcraft r1 500 ? , 1/16 w chip resistor rc0402jr--07500l yageo r2 90 ? , 1/16 w chip resistor rc0402jr--0790l yageo pcb 0.014 , r =3.7 fr408 isola note: component numbers c2, c5, c7, c8, c10, c11 and c15 are labeled on board but not placed.
MMZ25332BT1 9 rf device data freescale semiconductor, inc. 50 ohm application circuit: 2110?2170 mhz, 3.3 volt operation figure 16. MMZ25332BT1 test circuit component layout (1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]. note: component numbers c2*, c5*, c7*, c8*, c10*, c11* and c15* are labeled on board but not placed. c9 c7* r1 c12 r2 c13 c15* c14 c6 c1 l1 c4 l2 c3 qfn 3 3--12h rev. 1 rf out rf in c2* c5* c10* c8* c11* v cc1 v dect v cc2 v bias (1) pcb actual size: 1.3 1.46 . table 8. MMZ25332BT1 test circuit c omponent designations and values part description part number manufacturer c1, c12 1 f chip capacitors grm155r61a105ke15 murata c2, c5, c7, c8, c10, c11, c15 components not placed c3 470 pf chip capacitor grm1555c1h471ja01 murata c4 8.2 pf chip capacitor 04023j8r2bbs avx c6 4.7 f chip capacitor grm188r60j475ke19d murata c9, c14 22 pf chip capacitors 04023j22r0bbs avx c13 3.3 pf chip capacitor 04023j3r3bbs avx l1 12 nh chip inductor 0603hc--12nxjlw coilcraft l2 6.8 nh chip inductor 0603hc--6n8xjlw coilcraft r1 500 ? , 1/16 w chip resistor rc0402jr--07500l yageo r2 90 ? , 1/16 w chip resistor rc0402jr--0790l yageo pcb 0.014 , r =3.7 fr408 isola (test circuit component designations and values table repeated for reference.)
10 rf device data freescale semiconductor, inc. MMZ25332BT1 50 ohm typical characteristics ? 21 10?2170 mhz, 3.3 volt operation -- 3 0 figure 17. s11 versus frequency 2300 -- 3 5 0 1800 f, frequency (mhz) 1900 -- 5 -- 1 0 -- 1 5 -- 2 0 -- 2 5 -- 3 0 s11 (db) 2000 2100 2200 figure 18. s21 versus frequency 5 40 f, frequency (mhz) 35 30 25 15 10 s21 (db) figure 19. s12 versus frequency -- 4 8 -- 3 8 f, frequency (mhz) -- 4 0 -- 4 2 -- 4 4 -- 4 6 s12 (db) v cc1 =v cc2 =v bias =3.3vdc v cc1 =v cc2 =v bias =3.3vdc v cc1 =v cc2 =v bias =3.3vdc 20 figure 20. s22 versus frequency 0 f, frequency (mhz) -- 5 -- 1 0 -- 1 5 -- 2 0 -- 2 5 s22 (db) v cc1 =v cc2 =v bias =3.3vdc 2300 1800 1900 2000 2100 2200 2300 1800 1900 2000 2100 2200 2300 1800 1900 2000 2100 2200
MMZ25332BT1 11 rf device data freescale semiconductor, inc. 50 ohm typical characteristics ? 21 10?2170 mhz, 3.3 volt operation 540 120 180 figure 21. acpr and collector current versus output power p out , output power (dbm) -- 2 0 -- 2 5 -- 3 0 -- 6 0 21 -- 4 5 i cc , collector current (ma) acpr (dbc) -- 3 5 -- 5 5 11 13 240 300 360 420 480 -- 5 0 -- 6 5 27 600 60 0 -- 4 0 15 17 19 25 23 acpr 42 12 figure 22. power gain and power added efficiency versus output power p out , output power (dbm) 26 24 14 21 18 pae, power added efficiency (%) g ps , power gain (db) 22 11 13 18 24 30 36 16 12 27 48 6 0 20 15 17 19 25 23 28 gain pae figure 23. p1db versus frequency, cw f, frequency (mhz) 28 27 26 23 25 22 24 29 p1db, 1 db compression point, cw (dbm) i cc v cc1 =v cc2 =v bias =3.3vdc -- 7 0 v cc1 =v cc2 =v bias =3.3vdc f = 2140 mhz v cc1 =v cc2 =v bias =3.3vdc f = 2140 mhz figure 24. power detector versus output power p out , output power (dbm) 1.8 1.6 1.4 0.2 21 0.8 p det , power detector (v) 1.2 0.4 11 13 0.6 0 27 1 15 17 19 25 23 2 2300 1800 1900 2000 2100 2200 v cc1 =v cc2 =v bias =3.3vdc f = 2140 mhz
12 rf device data freescale semiconductor, inc. MMZ25332BT1 figure 25. pcb pad layout for qfn 3 3 3.00 3.40 2.00 0.50 0.30 0.70 solder pad with thermal via structure. all dimensions in mm. figure 26. product marking ma05 ywz
MMZ25332BT1 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. MMZ25332BT1
MMZ25332BT1 15 rf device data freescale semiconductor, inc.
16 rf device data freescale semiconductor, inc. MMZ25332BT1 appendix a MMZ25332BT1 test circuit schematic, fixture and parts list figure a--1. MMZ25332BT1 test circuit schematic ? 2500 mhz, 5 volt operation r1 l1 c12 3 1 c4 bias circuit v cc1 z1 l2 v bias c1 2 r2 p det c3 c9 c7 v cc2 c13 c15 c14 c6 z1 0.155 0.030 microstrip rf input rf output 456 7 8 9 12 11 10 table a--1. MMZ25332BT1 test circuit component desi gnations and values ? 2500 mhz, 5 volt operation part description part number manufacturer c1, c12 1 f chip capacitors grm155r61a105ke15 murata c2, c5, c8, c10, c11 components not placed c3 470 pf chip capacitor grm1555c1h471ja01d murata c4 7.5 pf chip capacitor 04023j7r5bbs avx c6 4.7 f chip capacitor grm188r60j475ke19d murata c7 120 pf chip capacitor grm1555c1h121ja01d murata c9, c14 22 pf chip capacitors 04023j22r0bbs avx c13 2.4 pf chip capacitor 04023j2r4bbs avx c15 1.8 pf chip capacitor 04023j1r8bbs avx l1 24 nh chip inductor 0603hc--24nxjlw coilcraft l2 22 nh chip inductor 0603hc--22nxjlw coilcraft r1 1.2 k ? , 1/16 w chip resistor rc0402jr--071k2l yageo r2 330 ? , 1/16 w chip resistor rc0402jr--07330l yageo pcb 0.014 , r =3.7 fr408 isola note: component numbers c2, c5, c8, c10 and c11 are labeled on board but not placed.
MMZ25332BT1 17 rf device data freescale semiconductor, inc. appendix a (continued) figure a--2. MMZ25332BT1 test ci rcuit component layout ? 2500 mhz, 5 volt operation (1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]. note: component numbers c2*, c5*, c8*, c10* and c11* are labeled on board but not placed. c9 c7 r1 c12 r2 c13 c15 c14 c6 c1 l1 c4 l2 c3 qfn 3 3--12h rev. 1 rf out rf in c2* c5* c10* c8* c11* v cc1 v dect v cc2 v bias (1) pcb actual size: 1.3 1.46 . table a--1. MMZ25332BT1 test circuit component desi gnations and values ? 2500 mhz, 5 volt operation part description part number manufacturer c1, c12 1 f chip capacitors grm155r61a105ke15 murata c2, c5, c8, c10, c11 components not placed c3 470 pf chip capacitor grm1555c1h471ja01d murata c4 7.5 pf chip capacitor 04023j7r5bbs avx c6 4.7 f chip capacitor grm188r60j475ke19d murata c7 120 pf chip capacitor grm1555c1h121ja01d murata c9, c14 22 pf chip capacitors 04023j22r0bbs avx c13 2.4 pf chip capacitor 04023j2r4bbs avx c15 1.8 pf chip capacitor 04023j1r8bbs avx l1 24 nh chip inductor 0603hc--24nxjlw coilcraft l2 22 nh chip inductor 0603hc--22nxjlw coilcraft r1 1.2 k ? , 1/16 w chip resistor rc0402jr--071k2l yageo r2 330 ? , 1/16 w chip resistor rc0402jr--07330l yageo pcb 0.014 , r =3.7 fr408 isola (test circuit component designations and values table repeated for reference.)
18 rf device data freescale semiconductor, inc. MMZ25332BT1 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers software ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. failure analysis at this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. in cases where freescale is contractually obligated to perform failure analysis (fa) services, full fa may be performed by third party vendors with moderate success. for updates c ontact your local freescale sales office. revision history the following table summarizes revisions to this document. revision date description 0 may 2012 ? initial release of data sheet 1 dec. 2012 ? added 2140 mhz, 5 volt operation, as follows: -- fig. 3, test circuit schematic, p. 3 -- table 7, test circuit component designations and values, p. 3 -- fig. 4, test circuit component layout, p. 4 -- fig. 5, s11 versus frequency versus temperature, p. 5 -- fig. 6, s21 versus frequency versus temperature, p. 5 -- fig. 7, s12 versus frequency versus temperature, p. 5 -- fig. 8, s22 versus frequency versus temperature, p. 5 -- fig. 9. acpr and collector current versus output power versus temperature ? 2140 mhz, p.6 -- fig. 9a. acpr and collector current versus output power ? 1960 mhz, p.6 -- fig. 10. power gain and power added efficiency v ersus output power versus temperature, p. 6 -- fig. 11. p1db versus frequency versus temperature, cw, p. 6 -- fig. 12. power detector versus output power versus temperature, p. 7 -- fig. 13. acpr and power added efficiency versus output power, p. 7 -- fig. 14. acpr versus output power with bias config 2 uncorrected and bias config 2 dpd corrected, p. 7 ? added 2140 mhz, 3.3 volt operation, as follows: -- fig. 15, test circuit schematic, p. 8 -- table 8, test circuit component designations and values, p. 8 -- fig. 16, test circuit component layout, p. 9 -- fig. 17, s11 versus frequency versus temperature, p. 10 -- fig. 18, s21 versus frequency versus temperature, p. 10 -- fig. 19, s12 versus frequency versus temperature, p. 10 -- fig. 20, s22 versus frequency versus temperature, p. 10 -- fig. 21, acpr and collector current versus output power, p .11 -- fig. 22, power gain and power added efficiency versus output power, p. 11 -- fig. 23, p1db versus frequency, cw, p. 11 -- fig. 24, power detector versus output power, p. 11 ? added appendix a, test circuit schem atic, fixture and parts list (for 2500 mhz, 5 volt operation) as follows: -- moved former fig. 3 (now fig. 27), test circuit schematic, to p. 16 -- moved former table 7 (now table 9), test circ uit component designations and values, to p.16 -- moved former fig. 4 (now fig. 28), test circuit component layout, to p.17 2 may 2014 ? updated frequency from 1800--2800 mhz to 1500--2800 mhz and junction temperature from 150 cto 175 c to reflect recent test results of the device, p. 1 ? added failure analysis information, p. 18
MMZ25332BT1 19 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. all other product or service names are the property of their respective owners. e 2012, 2014 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: mmz25332b rev. 2, 5/2014

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